| PART |
Description |
Maker |
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
http://
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| AGB3303S24Q1 AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50 OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
|
Infineon
|
| HMC478SC70 HMC478SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz
|
Hittite Microwave Corporation
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
| HMC476SC7010 476SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC481ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
